发明申请
US20140005991A1 SIMULATOR, METHOD, AND PROGRAM FOR PREDICTING PROCESSING SHAPE BY PLASMA PROCESS
审中-公开
用于通过等离子体处理预测处理形状的模拟器,方法和程序
- 专利标题: SIMULATOR, METHOD, AND PROGRAM FOR PREDICTING PROCESSING SHAPE BY PLASMA PROCESS
- 专利标题(中): 用于通过等离子体处理预测处理形状的模拟器,方法和程序
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申请号: US14003692申请日: 2012-02-29
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公开(公告)号: US20140005991A1公开(公告)日: 2014-01-02
- 发明人: Kohei Ono , Takuya Iwasaki
- 申请人: Kohei Ono , Takuya Iwasaki
- 申请人地址: JP Tokyo
- 专利权人: MIZUHO INFORMATION & RESEARCH INSTITUTE, INC.
- 当前专利权人: MIZUHO INFORMATION & RESEARCH INSTITUTE, INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-049680 20110307
- 国际申请: PCT/JP2012/055091 WO 20120229
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method and a program for predicting a processing shape by a plasma process, the method including: a conditions-setting step (STEP 11) for setting conditions relevant to an object to be processed, process conditions including a cycle number provided that an etching process and a deposition process are taken as one cycle, and conditions relevant to simulation; an etching process surface transition amount calculating step (STEP 12) for calculating a surface transition amount by plasma etching based on etching process conditions; and a deposition process surface transition amount calculating step (STEP 13) for calculating a surface transition amount by plasma deposition based on deposition process conditions, wherein the etching process surface transition amount calculating step (STEP 12) and the deposition process surface transition amount calculating step (STEP 13) are repeated for the cycle number set in the conditions-setting step (STEP 11), thereby obtaining a processing shape by the the Bosch process.
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