Invention Application
- Patent Title: DISCRETE DEVICE MODELING
- Patent Title (中): 离散装置建模
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Application No.: US13534526Application Date: 2012-06-27
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Publication No.: US20140007028A1Publication Date: 2014-01-02
- Inventor: Ching-Shun Yang , Chih Ming Yang , Wei-Yi Hu , Yi-Kan Cheng
- Applicant: Ching-Shun Yang , Chih Ming Yang , Wei-Yi Hu , Yi-Kan Cheng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Among other things, one or more techniques and/or systems are provided for modeling a discrete device as a macro device. That is, the discrete device can comprise one or more parasitic elements, such as parasitic resistances and/or capacitances. Because values of the parasitic elements are unknown during pre-simulation of the discrete device, the discrete device can be modeled as a macro device, which can be used during pre-simulation to take into account the parasitic elements. For example, specified parameters, such as channel length, can be used to obtain a set of RC values that specify predicted values for the one or more parasitic elements of the discrete device. The discrete device can be modeled as the macro device using the set of RC values. In this way, the macro device can be used during pre-simulation to take into account the parasitic effects of parasitic elements of the discrete device.
Public/Granted literature
- US08694938B2 Discrete device modeling Public/Granted day:2014-04-08
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