Invention Application
- Patent Title: Laser Annealing for Thin Film Solar Cells
- Patent Title (中): 激光退火薄膜太阳能电池
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Application No.: US14019413Application Date: 2013-09-05
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Publication No.: US20140007938A1Publication Date: 2014-01-09
- Inventor: Haifan Liang , Zhi-Wen Sun , Jeroen Van Duren
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L31/0749
- IPC: H01L31/0749
Abstract:
A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.
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