发明申请
- 专利标题： SILICON CARBIDE VERTICAL FIELD EFFECT TRANSISTOR
- 专利标题（中）： 碳化钨垂直场效应晶体管
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申请号： US14006548申请日： 2012-04-06
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公开(公告)号： US20140008666A1公开(公告)日： 2014-01-09
- 发明人: Yuichi Harada , Shinsuke Harada , Yasuyuki Hoshi , Noriyuki Iwamuro
- 申请人： Yuichi Harada , Shinsuke Harada , Yasuyuki Hoshi , Noriyuki Iwamuro
- 申请人地址： JP Tokyo JP Kawasaki-shi, Kanagawa
- 专利权人： National Instituteof Advanced Industrial Science and Technology,FUJI ELECTRIC CO., LTD.
- 当前专利权人： National Instituteof Advanced Industrial Science and Technology,FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Tokyo JP Kawasaki-shi, Kanagawa
- 优先权： JP2011086008 20110408
- 国际申请： PCT/JP2012/059489 WO 20120406
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/78
摘要：
A silicon carbide vertical field effect transistor includes a first-conductive-type silicon carbide substrate; a low-concentration first-conductive-type silicon carbide layer formed on a surface of the first-conductive-type silicon carbide substrate; second-conductive-type regions selectively formed on a surface of the first-conductive-type silicon carbide layer; first-conductive-type source regions formed in the second-conductive-type regions; a high-concentration second-conductive-type region formed between the first-conductive-type source regions in the second-conductive-type region; a source electrode electrically connected to the high-concentration second-conductive-type region and a first-conductive-type source region; a gate insulating film formed from the first-conductive-type source regions formed in adjacent second-conductive-type regions, onto the second-conductive-type regions and the first-conductive-type silicon carbide layer; a gate electrode formed on the gate insulating film; and a drain electrode on the back side of the first-conductive-type silicon carbide substrate, wherein an avalanche generating unit is disposed between the second-conductive-type region and the first-conductive-type silicon carbide layer.
公开/授权文献
- US09184230B2 Silicon carbide vertical field effect transistor 公开/授权日：2015-11-10
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