发明申请
- 专利标题： OXIDE REMOVAL FROM SEMICONDUCTOR SURFACES
- 专利标题（中）： 氧化硅从半导体表面去除
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申请号： US14005084申请日： 2012-03-14
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公开(公告)号： US20140008767A1公开(公告)日： 2014-01-09
- 发明人: Lianhe Li , Alexander Davies , Edmund Linfield
- 申请人： Lianhe Li , Alexander Davies , Edmund Linfield
- 优先权： GB1104261.1 20110314
- 国际申请： PCT/GB2012/050560 WO 20120314
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed, the method comprising: arranging the body in a vacuum chamber; and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidised surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.
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