发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- 专利标题(中): 半导体存储器件及其操作方法
-
申请号: US13615951申请日: 2012-09-14
-
公开(公告)号: US20140010008A1公开(公告)日: 2014-01-09
- 发明人: Byoung In JOO
- 申请人: Byoung In JOO
- 申请人地址: KR Icheon-si
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si
- 优先权: KR10-2012-0073970 20120706
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
The present disclosure relates to a semiconductor memory device and a method of operation the semiconductor memory device, which sets an encoding value by sequentially defining ranges used for recognizing distribution of memory cells based on a middle range and then performing a read operation in an order from the middle ranges to an outermost range, thereby capable of using infinite ranges for recognizing the distribution of the memory cells without addition of a circuit to an inside of the semiconductor memory device.
公开/授权文献
信息查询