发明申请
US20140010008A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
半导体存储器件及其操作方法

  • 专利标题: SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
  • 专利标题(中): 半导体存储器件及其操作方法
  • 申请号: US13615951
    申请日: 2012-09-14
  • 公开(公告)号: US20140010008A1
    公开(公告)日: 2014-01-09
  • 发明人: Byoung In JOO
  • 申请人: Byoung In JOO
  • 申请人地址: KR Icheon-si
  • 专利权人: SK hynix Inc.
  • 当前专利权人: SK hynix Inc.
  • 当前专利权人地址: KR Icheon-si
  • 优先权: KR10-2012-0073970 20120706
  • 主分类号: G11C16/06
  • IPC分类号: G11C16/06
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要:
The present disclosure relates to a semiconductor memory device and a method of operation the semiconductor memory device, which sets an encoding value by sequentially defining ranges used for recognizing distribution of memory cells based on a middle range and then performing a read operation in an order from the middle ranges to an outermost range, thereby capable of using infinite ranges for recognizing the distribution of the memory cells without addition of a circuit to an inside of the semiconductor memory device.
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