The device for performing continuous deposition of a solid hydrogen and/or deuterium film includes a cell provided with a control valve for controlling the flowrate of the gas inlet to the cell, a strip, and means for moving the strip in the cell. The device includes a pumping device placing a volume of the cell, through which the strip passes, at a first pressure, and a heat exchanger arranging the strip in said volume at a first temperature. To adjust the pressure, the device further includes a control circuit of the pumping device and of the control valve, adjusting the first pressure so as to condense a solid hydrogen and/or deuterium film on the strip in movement in said volume.