发明申请
- 专利标题： MEMORY DEVICES WITH SELECTIVE ERROR CORRECTION CODE
- 专利标题（中）： 具有选择性错误修正代码的存储器件
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申请号： US13915179申请日： 2013-06-11
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公开(公告)号： US20140013183A1公开(公告)日： 2014-01-09
- 发明人: Young-Soo SOHN , Chul-Woo PARK , Jong-Pil SON , Jung-bae LEE
- 申请人： Young-Soo SOHN , Chul-Woo PARK , Jong-Pil SON , Jung-bae LEE
- 优先权： KR10-2013-0016594 20130215
- 主分类号： G06F11/10
- IPC分类号： G06F11/10
摘要：
An error correction apparatus includes an error correction circuit configured to selectively perform error correction on a portion of data that is at least one of written to and read from a plurality of memory cells of a memory device. The portion of data is at least one of written to and read from a subset of the plurality of memory cells, and the subset includes only fail cells among the plurality of memory cells. The error correction apparatus further includes a fail address storage circuit configured to store address information for the fail cells.
公开/授权文献
- US09235466B2 Memory devices with selective error correction code 公开/授权日：2016-01-12