发明申请
- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法和制造半导体器件的装置
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申请号： US14024676申请日： 2013-09-12
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公开(公告)号： US20140014142A1公开(公告)日： 2014-01-16
- 发明人: Takeshi Hizawa , Nobuhide Yamada , Yoshihiro Ogawa , Masahiro Kiyotoshi
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-231502 20101014
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.
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