发明申请
US20140014942A1 THIN-FILM TRANSISTOR, ELECTRONIC CIRCUIT, DISPLAY AND METHOD OF MANUFACTURING THE SAME
审中-公开
薄膜晶体管，电子电路，显示器及其制造方法
- 专利标题： THIN-FILM TRANSISTOR, ELECTRONIC CIRCUIT, DISPLAY AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 薄膜晶体管，电子电路，显示器及其制造方法
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申请号： US13548133申请日： 2012-07-12
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公开(公告)号： US20140014942A1公开(公告)日： 2014-01-16
- 发明人: Kevin Michael O'Neill , Joris P.V. Maas
- 申请人： Joris P.V. Maas
- 申请人地址： NL Eindhoven
- 专利权人： POLYMER VISION B.V.
- 当前专利权人： POLYMER VISION B.V.
- 当前专利权人地址： NL Eindhoven
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66
摘要：
A bottom gate bottom contact thin-film transistor including a gate electrode, a source electrode, a drain electrode, a dielectric layer and a semiconductor layer of a semiconducting oxide is disclosed. The dielectric layer is arranged between the gate electrode and the semiconductor layer structure, and the source electrode and the drain electrode are covered with said semiconductor layer structure. The source electrode and the drain electrode include at least a first electrode portion of an oxygen reducing material, and a second electrode portion of an additional material different from said oxygen reducing material wherein the second electrode portion of the drain at a side facing the source exposes to said semiconductor layer structure at least a surface portion of a main surface of its first electrode portion facing away from the dielectric layer.
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