Invention Application
- Patent Title: HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME
- Patent Title (中): 用于其的高性能二极管器件结构和材料
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Application No.: US13929094Application Date: 2013-06-27
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Publication No.: US20140014946A1Publication Date: 2014-01-16
- Inventor: Sandhu Gurtej , Bhaskar Srinivasan
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: H01L29/24
- IPC: H01L29/24
Abstract:
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
Public/Granted literature
- US08796806B2 High-performance diode device structure and materials used for the same Public/Granted day:2014-08-05
Information query
IPC分类:
