发明申请
- 专利标题： HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME
- 专利标题（中）： 用于其的高性能二极管器件结构和材料
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申请号： US13929094申请日： 2013-06-27
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公开(公告)号： US20140014946A1公开(公告)日： 2014-01-16
- 发明人: Sandhu Gurtej , Bhaskar Srinivasan
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/24
- IPC分类号： H01L29/24
摘要：
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
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