发明申请
- 专利标题： NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 非易失性存储元件及其制造方法
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申请号： US14006424申请日： 2013-01-18
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公开(公告)号： US20140021429A1公开(公告)日： 2014-01-23
- 发明人: Satoru Ito , Satoru Fujii , Shinichi Yoneda , Takumi Mikawa
- 申请人： Satoru Ito , Satoru Fujii , Shinichi Yoneda , Takumi Mikawa
- 优先权： JP2012-010944 20120123
- 国际申请： PCT/JP2013/000225 WO 20130118
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer positioned between the first electrode and the second electrode. The variable resistance layer has a resistance state which reversibly changes based on an electrical signal applied between the first electrode and the second electrode. The variable resistance layer includes a first variable resistance layer having a first metal oxide and a second variable resistance layer having a second metal oxide. The second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, and the second metal oxide has a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide.
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