Invention Application
- Patent Title: NAND FLASH MEMORY HAVING MULTIPLE CELL SUBSTRATES
- Patent Title (中): 具有多个单元基板的NAND闪存
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Application No.: US14032816Application Date: 2013-09-20
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Publication No.: US20140022846A1Publication Date: 2014-01-23
- Inventor: Jin-Ki KIM
- Applicant: MOSAID Technologies Incorporated
- Applicant Address: CA Ottawa
- Assignee: MOSAID Technologies Incorporated
- Current Assignee: MOSAID Technologies Incorporated
- Current Assignee Address: CA Ottawa
- Main IPC: G11C16/16
- IPC: G11C16/16

Abstract:
A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost.
Public/Granted literature
- US09070461B2 NAND flash memory having multiple cell substrates Public/Granted day:2015-06-30
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