发明申请
- 专利标题： Method And Apparatus For Low Temperature ALD Deposition
- 专利标题（中）： 低温ALD沉积的方法和装置
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申请号： US13948492申请日： 2013-07-23
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公开(公告)号： US20140023794A1公开(公告)日： 2014-01-23
- 发明人: Maitreyee Mahajani , Steven D. Marcus , Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Ning Li , Jingjing Liu , Sukti Chatterjee , Timothy W. Weidman
- 申请人： Maitreyee Mahajani , Steven D. Marcus , Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Ning Li , Jingjing Liu , Sukti Chatterjee , Timothy W. Weidman
- 主分类号： C23C16/32
- IPC分类号： C23C16/32 ; C23C16/36 ; C23C16/34
摘要：
Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.
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