发明申请
US20140024138A1 METHOD FOR ETCHING METAL LAYER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
审中-公开
用于蚀刻金属层的方法和使用其制造半导体器件的方法
- 专利标题: METHOD FOR ETCHING METAL LAYER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
- 专利标题(中): 用于蚀刻金属层的方法和使用其制造半导体器件的方法
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申请号: US13941071申请日: 2013-07-12
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公开(公告)号: US20140024138A1公开(公告)日: 2014-01-23
- 发明人: Hyungjoon Kwon , Ken Tokashiki , Jongchul Park
- 申请人: Hyungjoon Kwon , Ken Tokashiki , Jongchul Park
- 优先权: KR10-2012-0079368 20120720
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065 ; H01L43/12
摘要:
The inventive concepts disclosed herein include, for instance, methods for etching a metal layer and methods for manufacturing a semiconductor device using the etched metal layer. A wafer including a metal layer and a mask layer on the metal layer may be loaded into a process chamber. An etching gas may be supplied into the process chamber to etch the metal layer exposed by the mask layer. After the etching process, the mask layer may be removed. The etching gas can include phosphorus (P) and fluorine (F). An RF power may be constantly or selectively supplied to the process chamber, or different levels of RF power can be selectively supplied. An etching gas can be supplied to the process chamber when the RF power is off or at a lower level. A surface activation gas can be supplied when the RF power is on or at a higher level.
公开/授权文献
- US3836219A Apparatus for filing documents 公开/授权日:1974-09-17