Invention Application
- Patent Title: PRODUCING METHOD OF SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13944577Application Date: 2013-07-17
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Publication No.: US20140024153A1Publication Date: 2014-01-23
- Inventor: Munehisa MITANI , Yuki EBE , Yasunari OOYABU
- Applicant: NITTO DENKO CORPORATION
- Priority: JP2012-158945 20120717; JP2013-133413 20130626
- Main IPC: H01L33/52
- IPC: H01L33/52

Abstract:
A method for producing a semiconductor device includes a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion; a wire-bonding step of connecting the terminal to the semiconductor element with a wire; a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.
Public/Granted literature
- US09048401B2 Producing method of semiconductor device Public/Granted day:2015-06-02
Information query
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