Invention Application
US20140024153A1 PRODUCING METHOD OF SEMICONDUCTOR DEVICE 有权
半导体器件的制造方法

  • Patent Title: PRODUCING METHOD OF SEMICONDUCTOR DEVICE
  • Patent Title (中): 半导体器件的制造方法
  • Application No.: US13944577
    Application Date: 2013-07-17
  • Publication No.: US20140024153A1
    Publication Date: 2014-01-23
  • Inventor: Munehisa MITANIYuki EBEYasunari OOYABU
  • Applicant: NITTO DENKO CORPORATION
  • Priority: JP2012-158945 20120717; JP2013-133413 20130626
  • Main IPC: H01L33/52
  • IPC: H01L33/52
PRODUCING METHOD OF SEMICONDUCTOR DEVICE
Abstract:
A method for producing a semiconductor device includes a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion; a wire-bonding step of connecting the terminal to the semiconductor element with a wire; a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.
Public/Granted literature
Information query
Patent Agency Ranking
0/0