发明申请
US20140027871A1 CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS
有权
充电传感器使用反转的双极双极晶体管
- 专利标题： CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS
- 专利标题（中）： 充电传感器使用反转的双极双极晶体管
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申请号： US13561671申请日： 2012-07-30
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公开(公告)号： US20140027871A1公开(公告)日： 2014-01-30
- 发明人: Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- 申请人： Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L27/14
- IPC分类号： H01L27/14
摘要：
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.