发明申请
US20140030549A1 GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL
审中-公开
第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
- 专利标题： GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL
- 专利标题（中）： 第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
-
申请号： US14041366申请日： 2013-09-30
-
公开(公告)号： US20140030549A1公开(公告)日： 2014-01-30
- 发明人: Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
- 申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takamoto Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-065845 20070314
- 主分类号： H01L31/0304
- IPC分类号： H01L31/0304 ; C30B29/40 ; G02B1/02
摘要：
A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.