发明申请
- 专利标题： MEASUREMENT OF RADIATIONS OF HIGH INFLUENCE BY A CAPACITIVE ELEMENT OF MOS TYPE
- 专利标题（中）： MOS型电容元件对高影响辐射的测量
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申请号： US13982586申请日： 2012-01-31
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公开(公告)号： US20140034841A1公开(公告)日： 2014-02-06
- 发明人: Richard Arinero , Julien Mekki , Antoine Touboul , Frederic Saigne , Jean-Roch Vaille
- 申请人： Richard Arinero , Julien Mekki , Antoine Touboul , Frederic Saigne , Jean-Roch Vaille
- 申请人地址： FR Montpellier
- 专利权人： UNIVERSITE MONTPELLIER 2 SCIENCES ET TECHNIQUES
- 当前专利权人： UNIVERSITE MONTPELLIER 2 SCIENCES ET TECHNIQUES
- 当前专利权人地址： FR Montpellier
- 优先权： FR1100303 20110201
- 国际申请： PCT/FR12/00040 WO 20120131
- 主分类号： G01T1/02
- IPC分类号： G01T1/02
摘要：
A method for measuring a dose related to the non-ionizing effects of a radiation of particles comprises the irradiation of a capacitive element provided with an electrode made from a semiconductor material, the measurement of the capacitance of the capacitive element in an accumulation regime and the determination of the dose related to the non-ionizing effects from the measurement of capacitance of the capacitive element in the accumulation regime.
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