发明申请
US20140034891A1 SEMICONDUCTOR MEMORY STRUCTURE AND ITS MANUFACTURING METHOD THEREOF
审中-公开
半导体存储器结构及其制造方法
- 专利标题： SEMICONDUCTOR MEMORY STRUCTURE AND ITS MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体存储器结构及其制造方法
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申请号： US13376994申请日： 2011-08-15
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公开(公告)号： US20140034891A1公开(公告)日： 2014-02-06
- 发明人: Pengfei Wang , Xi Lin , Qingqing Sun , Wei Zhang
- 申请人： Pengfei Wang , Xi Lin , Qingqing Sun , Wei Zhang
- 申请人地址： CN Shanghai
- 专利权人： FUDAN UNIVERSITY
- 当前专利权人： FUDAN UNIVERSITY
- 当前专利权人地址： CN Shanghai
- 优先权： CN201110101360.7 20110422
- 国际申请： PCT/CN11/01352 WO 20110815
- 主分类号： H01L27/24
- IPC分类号： H01L27/24
摘要：
The present invention belongs to the technical field of microelectronic devices, specifically relates to a semiconductor memory structure and its manufacturing method thereof. The semiconductor memory structure which carries out erasing, writing and reading operation on the phase change memory or the resistance change memory through a tunneling field-effect transistor is formed, for one hand, the high current passed through the tunneling field-effect transistor when the p-n junction the biased positively, meeting the high current requirements for erasing of and writing of the phase change memory and the resistance change memory, and on the other hand, Vertical structure of the field-effect transistor can greatly improve the density of memory devices arrays. The present invention also discloses a method, which is very suitable for the memory chips, for the manufacturing of the semiconductor memory structure using self-aligned process.
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