发明申请
US20140037991A1 MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS
审中-公开
具有合成抗真菌储存层的磁性随机存取存储器
- 专利标题： MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS
- 专利标题（中）： 具有合成抗真菌储存层的磁性随机存取存储器
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申请号： US13562873申请日： 2012-07-31
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公开(公告)号： US20140037991A1公开(公告)日： 2014-02-06
- 发明人: David W. Abraham , Michael C. Gaidis
- 申请人： David W. Abraham , Michael C. Gaidis
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： G11B5/66
- IPC分类号： G11B5/66
摘要：
A synthetic antiferromagnetic device includes a first tantalum layer, a reference layer disposed on the first tantalum layer and including a first cobalt iron boron layer, a second cobalt iron boron layer disposed on the first cobalt iron boron layer, a third cobalt iron boron layer and a second tantalum layer disposed between the second and third cobalt iron boron layers, a magnesium oxide spacer layer disposed on the reference layer and a cap layer disposed on the magnesium oxide spacer layer.