A self-polarized mask is provided including a transparent substrate, first and second layers of polarization material consecutively provided on the transparent substrate and polarized in a first and a second direction, respectively. A first region is provided that extends in the first direction and contains only the first layer and no second layer, a second region is provided that extends in the second direction and contains only the second layer and no first layer. Embodiments include exposing a photoresist to light through the mask such that light polarized in the first direction passes through the mask in the first region to expose a first-directional region of the photoresist layer used to form a first-directional semiconductor device structure, and light polarized in the second direction passes through the mask in the second region to expose a second-directional region of the photoresist layer used to form a second-directional semiconductor device structure.