Invention Application
- Patent Title: LITHOGRAPHY USING PHOTORESIST WITH PHOTOINITIATOR AND PHOTOINHIBITOR
- Patent Title (中): 使用光敏剂和光敏剂的光刻胶的光刻
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Application No.: US14048682Application Date: 2013-10-08
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Publication No.: US20140038103A1Publication Date: 2014-02-06
- Inventor: SETH ADRIAN MILLER
- Applicant: EMPIRE TECHNOLOGY DEVELOPMENT, LLC
- Applicant Address: US DE WILMINGTON
- Assignee: EMPIRE TECHNOLOGY DEVELOPMENT, LLC
- Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT, LLC
- Current Assignee Address: US DE WILMINGTON
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/20

Abstract:
Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant.
Public/Granted literature
- US09599895B2 Lithography using photoresist with photoinitiator and photoinhibitor Public/Granted day:2017-03-21
Information query
IPC分类: