发明申请
- 专利标题： Asymmetrical Gate MOS Device and Method of Making
- 专利标题（中）： 非对称门MOS器件及制作方法
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申请号： US14113705申请日： 2011-12-28
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公开(公告)号： US20140048875A1公开(公告)日： 2014-02-20
- 发明人: Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
- 申请人： Dongping Wu , Cheng Hu , Lun Zhu , Zhiwei Zhu , Shili Zhang , Wei Zhang
- 申请人地址： CN Shanghai
- 专利权人： FUDAN UNIVERSITY
- 当前专利权人： FUDAN UNIVERSITY
- 当前专利权人地址： CN Shanghai
- 优先权： CN201110106296.1 20110426
- 国际申请： PCT/CN2011/084808 WO 20111228
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78
摘要：
An asymetric gate MOS device is disclosed. The gate is a metal gate, and the metal gate has a different work function on the source side from that on the drain side of the MOS device, so that the overall performance parameters of the MOS device are more optimized. A method of making an asymetric gate MOS device is also disclosed. In the method, dopant ions are implanted into the gate of the MOS device, so as to cause the gate to have a different work function on the source side from that on the drain side of the MOS device. As a result, the overall performance parameters of the MOS device are more optimized. The method can be easily implemented.
公开/授权文献
- US09209029B2 Asymmetrical gate MOS device and method of making 公开/授权日：2015-12-08