发明申请
- 专利标题： FIN STRUCTURE FORMATION INCLUDING PARTIAL SPACER REMOVAL
- 专利标题（中）： FIN结构形成，包括部分间隔开除
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申请号： US13585395申请日： 2012-08-14
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公开(公告)号： US20140051247A1公开(公告)日： 2014-02-20
- 发明人: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Chun-Chen Yeh
- 申请人： Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Chun-Chen Yeh
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask; partially removing the partially exposed first spacer; and etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate.
公开/授权文献
- US08741701B2 Fin structure formation including partial spacer removal 公开/授权日：2014-06-03
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