发明申请
- 专利标题: THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE
- 专利标题(中): 薄膜晶体管结构,如薄膜晶体管和每个具有结构的显示器件
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申请号: US14113303申请日: 2012-04-19
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公开(公告)号: US20140054588A1公开(公告)日: 2014-02-27
- 发明人: Takeaki Maeda , Toshihiro Kugimiya
- 申请人: Takeaki Maeda , Toshihiro Kugimiya
- 申请人地址: JP Kobe-shi
- 专利权人: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)
- 当前专利权人: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)
- 当前专利权人地址: JP Kobe-shi
- 优先权: JP2011-096442 20110422
- 国际申请: PCT/JP12/60576 WO 20120419
- 主分类号: H01L29/786
- IPC分类号: H01L29/786
摘要:
There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.