发明申请
- 专利标题: OPTICALLY REACTIVE MASKING
- 专利标题(中): 光学反应性掩蔽
-
申请号: US13590341申请日: 2012-08-21
-
公开(公告)号: US20140054754A1公开(公告)日: 2014-02-27
- 发明人: Tadayoshi Watanabe , Hideaki Masuda , Hideshi Miyajima
- 申请人: Tadayoshi Watanabe , Hideaki Masuda , Hideshi Miyajima
- 申请人地址: US CA Irvine
- 专利权人: TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
- 当前专利权人: TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
- 当前专利权人地址: US CA Irvine
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L29/02
摘要:
Systems and methods are presented for filling an opening with material of a high integrity. A material having properties in a first physical state suitable for formation of a hard mask layer and in a second physical state having properties facilitating removal of the former hard mask layer is utilized. Utilizing the material as a mask layer and subsequently removing the material enables a number of mask layers to be minimized in a subsequent filling operation (e.g., metallization). Material amenable to being in a first physical state and a second physical state is an optically reactive material. The optically reactive dielectric can comprise an element or compound which can act as an agent/catalyst in the optical conversion process along with any element or compound which can act as an accelerator for the optical reaction. Conversion can be brought about by exposure to electromagnetic radiation and/or application of thermal energy.
信息查询
IPC分类: