发明申请
- 专利标题： METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
- 专利标题（中）： 形成半导体器件结构的方法和相关半导体器件结构
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申请号： US13590928申请日： 2012-08-21
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公开(公告)号： US20140054755A1公开(公告)日： 2014-02-27
- 发明人: Xinyu Zhang , Soichi Sugiura , Yu Zeng
- 申请人： Xinyu Zhang , Soichi Sugiura , Yu Zeng
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/3065 ; H01L29/02
摘要：
A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.
公开/授权文献
- US09159677B2 Methods of forming semiconductor device structures 公开/授权日：2015-10-13
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