发明申请
- 专利标题： Method for Producing an Optoelectronic Semiconductor Chip
- 专利标题（中）： 制造光电半导体芯片的方法
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申请号： US14002968申请日： 2012-02-15
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公开(公告)号： US20140057417A1公开(公告)日： 2014-02-27
- 发明人: Christian Leirer , Anton Vogl , Andreas Biebersdorf , Joachim Hertkorn , Tetsuya Taki , Rainer Butendeich
- 申请人： Christian Leirer , Anton Vogl , Andreas Biebersdorf , Joachim Hertkorn , Tetsuya Taki , Rainer Butendeich
- 申请人地址： DE Regensburg
- 专利权人： OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人： OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人地址： DE Regensburg
- 优先权： DE102011012925.1 20110303
- 国际申请： PCT/EP2012/052617 WO 20120215
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L33/00 ; H01L31/18
摘要：
A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner.
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