发明申请
- 专利标题: ADAPTIVE ERROR CORRECTION FOR NON-VOLATILE MEMORIES
- 专利标题(中): 非易失性存储器的自适应错误校正
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申请号: US13595282申请日: 2012-08-27
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公开(公告)号: US20140059398A1公开(公告)日: 2014-02-27
- 发明人: Jeffrey C. Cunningham , Horacio P. Gasquet , Ross S. Scouller , Marco A. Cabassi
- 申请人: Jeffrey C. Cunningham , Horacio P. Gasquet , Ross S. Scouller , Marco A. Cabassi
- 主分类号: G11C29/04
- IPC分类号: G11C29/04 ; G06F11/08
摘要:
Methods and systems are disclosed for adaptive error correction for non-volatile memories that dynamically adjust sense amplifier read detection windows. Memory control circuitry uses error correction code (ECC) routines to detect bit errors that are non-correctable using these ECC routines. The memory control circuitry then dynamically adjusts sense amplifier read detection windows to allow for correct data to be determined. Corrected data can then be output to external circuitry. The corrected data can also be stored for later access when subsequent read operations attempt to access address locations that previously suffered bit failures. The disclosed methods and systems can also be used with respect to memories that are not non-volatile memories.
公开/授权文献
- US08793558B2 Adaptive error correction for non-volatile memories 公开/授权日:2014-07-29
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