发明申请
US20140065798A1 METHOD AND APPARATUS FOR FORMING GATE STACK ON Si, SiGe or Ge CHANNELS
有权
用于在Si，SiGe或Ge通道上形成栅极堆叠的方法和装置
- 专利标题： METHOD AND APPARATUS FOR FORMING GATE STACK ON Si, SiGe or Ge CHANNELS
- 专利标题（中）： 用于在Si，SiGe或Ge通道上形成栅极堆叠的方法和装置
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申请号： US14016027申请日： 2013-08-30
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公开(公告)号： US20140065798A1公开(公告)日： 2014-03-06
- 发明人: Khaled Z. Ahmed , Steven Hung , Kaushal K. Singh , Sundar Ramamurthy
- 申请人： Khaled Z. Ahmed , Steven Hung , Kaushal K. Singh , Sundar Ramamurthy
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/67
摘要：
Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing.