Invention Application
- Patent Title: HIGH PERFORMANCE ON-CHIP VERTICAL COAXIAL CABLE, METHOD OF MANUFACTURE AND DESIGN STRUCTURE
- Patent Title (中): 高性能片上垂直同轴电缆，制造方法和设计结构
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Application No.: US14076656Application Date: 2013-11-11
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Publication No.: US20140065817A1Publication Date: 2014-03-06
- Inventor: Essam Mina , Guoan Wang , Wayne H. Woods, JR.
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/768
- IPC: H01L21/768 ; G06F17/50
Abstract:
A high performance on-chip vertical coaxial cable structure, method of manufacturing and design structure thereof is provided. The coaxial cable structure includes an inner conductor and an insulating material that coaxially surrounds the inner conductor. The structure further includes an outer conductor which surrounds the insulating material. Both the inner and outer conductors comprise a plurality of metal layers formed on different wiring levels and interconnected between the different wiring levels by conductors. The coaxial cable structure is formed upon a surface of a semiconductor substrate and is oriented in substantially perpendicular alignment with the surface.
Public/Granted literature
- US09054157B2 High performance on-chip vertical coaxial cable, method of manufacture and design structure Public/Granted day:2015-06-09
Information query
IPC分类:
