A semiconductor light emitting device includes a semiconductor lamination including a p-type semiconductor layer, an active semiconductor layer, and an n-type semiconductor layer; opposing electrode structure including a first electrode structure formed above the p-type semiconductor layer, and a second electrode structure formed above the n-type semiconductor layer; and brightness grade producing structure including a surface layer of at least one of the p-type semiconductor layer and the n-type semiconductor layer and producing brightness grade gradually changing from one edge to opposite edge of light output plane.