发明申请
- 专利标题: SELF ALIGNED CONTACT WITH IMPROVED ROBUSTNESS
- 专利标题(中): 自我调整的联系与改进的鲁棒性
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申请号: US13613436申请日: 2012-09-13
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公开(公告)号: US20140070333A1公开(公告)日: 2014-03-13
- 发明人: Kangguo Cheng , Ali Khakifirooz , Shom Ponoth , Raghavasimhan Sreenivasan
- 申请人: Kangguo Cheng , Ali Khakifirooz , Shom Ponoth , Raghavasimhan Sreenivasan
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/78
摘要:
A method of forming a semiconductor device including providing a functional gate structure on a channel portion of a semiconductor substrate. A gate sidewall spacer is adjacent to the functional gate structure and an interlevel dielectric layer is present adjacent to the gate sidewall spacer. The upper surface of the gate conductor is recessed relative to the interlevel dielectric layer. A multi-layered cap is formed a recessed surface of the gate structure, wherein at least one layer of the multi-layered cap includes a high-k dielectric material and is present on a sidewall of the gate sidewall spacer at an upper surface of the functional gate structure. Via openings are etched through the interlevel dielectric layer selectively to at least the high-k dielectric material of the multi-layered cap, wherein at least the high-k dielectric material protects a sidewall of the gate conductor.
公开/授权文献
- US09034703B2 Self aligned contact with improved robustness 公开/授权日:2015-05-19