发明申请
US20140077778A1 TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH
有权
在TRENCH中具有独立耦合元件的TRENCH MOSFET
- 专利标题： TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH
- 专利标题（中）： 在TRENCH中具有独立耦合元件的TRENCH MOSFET
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申请号： US13617744申请日： 2012-09-14
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公开(公告)号： US20140077778A1公开(公告)日： 2014-03-20
- 发明人: Tetsuo Sato , Tomoaki Uno , Hirokazu Kato , Nobuyoshi Matsuura
- 申请人： Tetsuo Sato , Tomoaki Uno , Hirokazu Kato , Nobuyoshi Matsuura
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; G05F1/00
摘要：
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
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