发明申请
- 专利标题: Block And Page Level Bad Bit Line And Bits Screening Methods For Program Algorithm
- 专利标题(中): 块和页级差位线和位筛选方法的程序算法
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申请号: US13622765申请日: 2012-09-19
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公开(公告)号: US20140082437A1公开(公告)日: 2014-03-20
- 发明人: Jun Wan , Bo Lei , Feng Pan , Yongke Sun
- 申请人: SANDISK TECHNOLOGIES INC.
- 申请人地址: US TX Plano
- 专利权人: SANDISK TECHNOLOGIES INC.
- 当前专利权人: SANDISK TECHNOLOGIES INC.
- 当前专利权人地址: US TX Plano
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F11/00
摘要:
A programming process evaluates NAND strings of a block to detect a defective NAND string, e.g., a NAND string with a defective storage element. Status bits can be stored which identify the defective NAND string. Original data which is to be written in the NAND string is modified so that programming of the defective NAND string does not occur. For example, a bit of write data which requires a storage element in the defective NAND string to be programmed to a higher data state is modified (e.g., flipped) so that no programming of the storage element is required. Subsequently, when a read operation is performed, the flipped bits are flipped back to their original value, such as by using error correction code decoding. In an erase process, a count of defective NAND strings is made and used to adjust a pass condition of a verify test.
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