发明申请
- 专利标题： THIN-FILM TRANSISTOR
- 专利标题（中）： 薄膜晶体管
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申请号： US14116328申请日： 2012-05-01
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公开(公告)号： US20140084289A1公开(公告)日： 2014-03-27
- 发明人: Masayuki Itose , Mami Nishimura , Hirokazu Kawashima , Misa Sunagawa , Masashi Kasami , Koki Yano
- 申请人： Masayuki Itose , Mami Nishimura , Hirokazu Kawashima , Misa Sunagawa , Masashi Kasami , Koki Yano
- 专利权人： Idemitsu Kosan Co., Ltd.
- 当前专利权人： Idemitsu Kosan Co., Ltd.
- 优先权： JP2011-105721 20110510
- 国际申请： PCT/JP2012/002944 WO 20120501
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/26
摘要：
A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≦In/(In+Ga+Zn)≦0.68 and 0.15
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