Invention Application
US20140094028A1 Contact and Via Interconnects Using Metal Around Dielectric Pillars
审中-公开
接触和通过互连使用电介质支柱附近的金属
- Patent Title: Contact and Via Interconnects Using Metal Around Dielectric Pillars
- Patent Title (中): 接触和通过互连使用电介质支柱附近的金属
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Application No.: US14098255Application Date: 2013-12-05
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Publication No.: US20140094028A1Publication Date: 2014-04-03
- Inventor: Scott R. Summerfelt
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L21/768
- IPC: H01L21/768

Abstract:
An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming an integrated circuit that includes forming a vertical interconnect that has a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure, and an upper conductive structure contacts a top surface of the vertical interconnect.
Public/Granted literature
- US09048297B2 Contact and via interconnects using metal around dielectric pillars Public/Granted day:2015-06-02
Information query
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