Invention Application
US20140094028A1 Contact and Via Interconnects Using Metal Around Dielectric Pillars 审中-公开
接触和通过互连使用电介质支柱附近的金属

  • Patent Title: Contact and Via Interconnects Using Metal Around Dielectric Pillars
  • Patent Title (中): 接触和通过互连使用电介质支柱附近的金属
  • Application No.: US14098255
    Application Date: 2013-12-05
  • Publication No.: US20140094028A1
    Publication Date: 2014-04-03
  • Inventor: Scott R. Summerfelt
  • Applicant: Texas Instruments Incorporated
  • Main IPC: H01L21/768
  • IPC: H01L21/768
Contact and Via Interconnects Using Metal Around Dielectric Pillars
Abstract:
An integrated circuit containing a vertical interconnect that includes a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure. An upper conductive structure contacts a top surface of the vertical interconnect. A process of forming an integrated circuit that includes forming a vertical interconnect that has a region of interconnect metal continuously surrounding one or more dielectric pillars. The vertical interconnect electrically contacts a top surface of a lower conductive structure, and an upper conductive structure contacts a top surface of the vertical interconnect.
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