Invention Application
- Patent Title: SELECTIVE WET ETCHING OF HAFNIUM ALUMINUM OXIDE FILMS
- Patent Title (中): 氧化铝薄膜的选择性湿蚀刻
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Application No.: US14136081Application Date: 2013-12-20
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Publication No.: US20140103498A1Publication Date: 2014-04-17
- Inventor: Prashant Raghu , Yi Yang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.
Information query
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