Invention Application
US20140110248A1 CHAMBER PASTING METHOD IN A PVD CHAMBER FOR REACTIVE RE-SPUTTERING DIELECTRIC MATERIAL
审中-公开
用于反应性重新溅射电介质材料的PVD室中的室内喷涂方法
- Patent Title: CHAMBER PASTING METHOD IN A PVD CHAMBER FOR REACTIVE RE-SPUTTERING DIELECTRIC MATERIAL
- Patent Title (中): 用于反应性重新溅射电介质材料的PVD室中的室内喷涂方法
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Application No.: US14036057Application Date: 2013-09-25
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Publication No.: US20140110248A1Publication Date: 2014-04-24
- Inventor: Yong CAO , Thanh X. NGUYEN , Muhammad M. RASHEED , Xianmin TANG
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: C23C14/34
- IPC: C23C14/34
Abstract:
According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.
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