发明申请
- 专利标题： Interconnection Structure
- 专利标题（中）： 互连结构
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申请号： US13664176申请日： 2012-10-30
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公开(公告)号： US20140117534A1公开(公告)日： 2014-05-01
- 发明人: Hao-Juin Liu , Yao-Chun Chuang , Chita Chuang , Yu-Jen Tseng , Chen-Shien Chen
- 申请人： Taiwan Semiconductor Manufacturing Company. Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L21/768 ; H01L23/482
摘要：
A structure comprises a first passivation layer formed over a substrate, a second passivation layer formed over the first passivation layer, wherein the second passivation layer includes a first opening with a first dimension, a bond pad embedded in the first passivation layer and the second passivation layer, a protection layer formed on the second passivation layer comprising a second opening with a second dimension, wherein the second dimension is greater than the first dimension and a connector formed on the bond pad.
公开/授权文献
- US09673125B2 Interconnection structure 公开/授权日：2017-06-06
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