Invention Application
US20140138673A1 SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS AND WITH REDUCED POWER CONSUMPTION
有权
自对准金属氧化物膜，具有减少数量的掩模和降低功耗
- Patent Title: SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS AND WITH REDUCED POWER CONSUMPTION
- Patent Title (中): 自对准金属氧化物膜，具有减少数量的掩模和降低功耗
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Application No.: US14071644Application Date: 2013-11-05
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Publication No.: US20140138673A1Publication Date: 2014-05-22
- Inventor: Chan- Long Shieh , Gang Yu , Fatt Foong
- Applicant: Chan- Long Shieh , Gang Yu , Fatt Foong
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/12 ; H01L29/786
Abstract:
A method of fabricating MOTFTs includes positioning opaque gate metal on a transparent substrate, depositing gate dielectric material overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material thereon. Etch stop material is deposited on the semiconductor material. Photoresist defines an isolation area in the semiconductor material. Exposing the photoresist from the rear surface of the substrate and removing exposed portions to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material to form source and drain areas.
Public/Granted literature
- US09318614B2 Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption Public/Granted day:2016-04-19
Information query
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