Invention Application
- Patent Title: STATIC RANDOM ACCESS MEMORY CIRCUIT WITH STEP REGULATOR
- Patent Title (中): 带步进稳压器的静态随机存取电路
-
Application No.: US13683317Application Date: 2012-11-21
-
Publication No.: US20140140147A1Publication Date: 2014-05-22
- Inventor: Robert P. Masleid
- Applicant: ORACLE INTERNATIONAL CORPORATION
- Applicant Address: US CA Redwood City
- Assignee: Oracle International Corporation
- Current Assignee: Oracle International Corporation
- Current Assignee Address: US CA Redwood City
- Main IPC: G11C7/12
- IPC: G11C7/12

Abstract:
Implementations of the present disclosure involve a circuit and/or method for providing a static random access memory (SRAM) component of a very large scale integration (VLSI) design, such as a microprocessor design. In particular, the present disclosure provides for an SRAM circuit that includes a step voltage regulator coupled to the SRAM circuit and designed to maintain a fixed-value voltage drop across the regulator rather than a fixed voltage across the load of the SRAM circuit. The fixed-value drop across the regulator allows the SRAM circuit to be operated at a low retention voltage to reduce leakage of the SRAM circuit while maintaining the parasitic decoupling capacitance across the power supply from the SRAM circuit to reduce power signal fluctuations. In addition, the regulator circuit coupled to the SRAM circuit may include a switch circuit to control the various states of the SRAM circuit.
Public/Granted literature
- US09013943B2 Static random access memory circuit with step regulator Public/Granted day:2015-04-21
Information query