发明申请
US20140146607A1 SEMICONDUCTOR MEMORY DEVICE FOR PSEUDO-RANDOM NUMBER GENERATION
有权
用于PSEUDO随机数生成的半导体存储器件
- 专利标题: SEMICONDUCTOR MEMORY DEVICE FOR PSEUDO-RANDOM NUMBER GENERATION
- 专利标题(中): 用于PSEUDO随机数生成的半导体存储器件
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申请号: US13985436申请日: 2012-02-17
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公开(公告)号: US20140146607A1公开(公告)日: 2014-05-29
- 发明人: Yuji Nagai , Atsushi Inoue , Yoshikazu Takeyama
- 申请人: Yuji Nagai , Atsushi Inoue , Yoshikazu Takeyama
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011125282 20110603
- 国际申请: PCT/JP2012/054497 WO 20120217
- 主分类号: G11C16/22
- IPC分类号: G11C16/22
摘要:
According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a random number generation circuit configured to generate a random number, and a controller configured to control the memory cell array and the random number generation circuit. The random number generation circuit includes a random number control circuit configured to generate a random number parameter based on data which is read out from the memory cell by a generated control parameter, and a pseudo-random number generation circuit configured to generate the random number by using the random number parameter as a seed value.
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