发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US13690973申请日: 2012-11-30
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公开(公告)号: US20140151793A1公开(公告)日: 2014-06-05
- 发明人: Jae-Han CHA , Kyung-Ho LEE , Sun-Goo KIM , Hyung-Suk CHOI , Ju-Ho KIM , Jin-Young CHAE , In-Taek OH
- 申请人: Jae-Han CHA , Kyung-Ho LEE , Sun-Goo KIM , Hyung-Suk CHOI , Ju-Ho KIM , Jin-Young CHAE , In-Taek OH
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L29/78
摘要:
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.
公开/授权文献
- US08853787B2 High voltage semiconductor device 公开/授权日:2014-10-07
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