发明申请
US20140159250A1 BBUL TOP SIDE SUBSTRATE LAYER ENABLING DUAL SIDED SILICON INTERCONNECT AND STACKING FLEXIBILITY
审中-公开
BBUL顶层底板层启用双面硅互连和堆叠灵活性
- 专利标题： BBUL TOP SIDE SUBSTRATE LAYER ENABLING DUAL SIDED SILICON INTERCONNECT AND STACKING FLEXIBILITY
- 专利标题（中）： BBUL顶层底板层启用双面硅互连和堆叠灵活性
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申请号： US13976394申请日： 2011-12-31
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公开(公告)号： US20140159250A1公开(公告)日： 2014-06-12
- 发明人: Robert M. Nickerson
- 申请人： Robert M. Nickerson
- 国际申请： PCT/US11/68277 WO 20111231
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/498
摘要：
An apparatus including a die including a first side and an opposite second side including a device side with contact points; and a build-up carrier including at least one layer of conductive material disposed on a first side of the die, and a plurality of alternating layers of conductive material and dielectric material disposed on the second side of the die, wherein the at least one layer of conductive material on the first side of the die is coupled to at least one of (1) at least one of the alternating layers of conductive material on the second side of the die and (2) at least one of the contact points of the die. A method including forming a first portion of a build-up carrier adjacent one side of a die, and forming a second portion of the build-up carrier adjacent another side of the die.
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