发明申请
US20140167118A1 CROSSTALK IMPROVEMENT THROUGH P ON N STRUCTURE FOR IMAGE SENSOR
有权
通过P ON N图像传感器的结构改进了CROSSTALK
- 专利标题： CROSSTALK IMPROVEMENT THROUGH P ON N STRUCTURE FOR IMAGE SENSOR
- 专利标题（中）： 通过P ON N图像传感器的结构改进了CROSSTALK
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申请号： US14185710申请日： 2014-02-20
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公开(公告)号： US20140167118A1公开(公告)日： 2014-06-19
- 发明人: Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
- 申请人： Taiwan Semiconductor Manufacturing Company Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/146
- IPC分类号： H01L27/146
摘要：
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
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