发明申请
- 专利标题： DEPOSITING NANO-DOTS ON A SUBSTRATE
- 专利标题（中）： 在基底上沉积纳米角
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申请号： US14236967申请日： 2011-08-30
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公开(公告)号： US20140174941A1公开(公告)日： 2014-06-26
- 发明人: Peter Mardilovich , Qingqiao Wei , Anthony M. Fuller
- 申请人： Peter Mardilovich , Qingqiao Wei , Anthony M. Fuller
- 申请人地址： US TX Houston
- 专利权人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- 当前专利权人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- 当前专利权人地址： US TX Houston
- 国际申请： PCT/US2011/049664 WO 20110830
- 主分类号： C25D5/02
- IPC分类号： C25D5/02
摘要：
A method of depositing nano-dots on a substrate includes forming a template on the base, the template defining nano-pores, at least partially filling the nano-pores with a pillar material to define nano-pillars, depositing a dot material on the nano-pillars to define nano-dots on the nano-pillars, and contact printing the substrate with the array of nano-dots.
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