发明申请
- 专利标题: BIT-FLIPPING IN MEMORIES
- 专利标题(中): 记忆笔记本
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申请号: US13724924申请日: 2012-12-21
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公开(公告)号: US20140177323A1公开(公告)日: 2014-06-26
- 发明人: Arun B. Hegde , Spencer M. Gold , Thomas E. Ryan
- 申请人: Arun B. Hegde , Spencer M. Gold , Thomas E. Ryan
- 主分类号: G11C11/419
- IPC分类号: G11C11/419
摘要:
Data stored in SRAM cells are periodically flipped e.g., before long idle periods. Operating the memories in both a ‘flipped’ mode and a ‘non-flipped’ mode helps cause the Bias Temperature Instability (BTI) degradation to be symmetric, thereby not degrading the Static Noise Margin (SNM) degradation of the cells. The data stored in memory locations is flipped by reading out the data, inverting the read out data, and writing the inverted read out data into the memory locations until the memory locations of the SRAM have been read out and written. When the memory operates in flipped mode, data read from and written into the memory is inverted to maintain transparency to the memory user. After operating the data in flipped mode for a period of time, the flipped data stored in the memory is reflipped to operate in the non-flipped mode.
公开/授权文献
- US09047981B2 Bit-flipping in memories 公开/授权日:2015-06-02